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| ۼ |
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2024-02-14 |
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11ȸ мȸ ȣ |
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| A-1 |
÷∙∙ |
ʱ1), 1), ȯ2)* |
1)2)б |
Horizontally aligned multiple
blue InGaN/GaN microrod LEDs onto flexible substrate and its operation |
| A-2 |
LED/÷/߱ |
1),
1), ʱ1), 2), ȯ1),2)* |
1)2)б |
LSP ̿ AlGaInP LED |
| A-3 |
LED/÷/߱ |
ۿ*, ÿ, μ, ֽ, ȣ |
ѱ |
÷̿ ü |
| A-4 |
LED/÷/߱ |
Taehwan Kim, Yeong-Hoon Cho, Pil-Kyu Jang,
Seungjae Baek, Sang-Bum Kim, In-Hwan Lee* |
Korea University |
Improved Quantum Efficiency in Individually Aligned InGaN/GaN
Nanorod LEDs via Self-Assembled Ag Nanoparticles |
| A-5 |
LED/÷/߱ |
1),
2), 1)* |
1)KAIST2)KIST |
ȭ ۽ī |
| A-6 |
LED/÷/߱ |
Abu Bashar Mohammad hamidul Islam1), Hyeondong Lee1), Yu-Jung Cha1), Jae Won Seo1), Jiun Oh1), Minji Kim1), Jong-In Shim2), Dong-Soo Shin2), Joon Seop Kwak1)* |
1)KENTECH2)Hanyang University |
Strain relaxation in InGaN/AlGaN near ultraviolet
light-emitting diodes: Effect of quantum barrier thickness |
| A-7 |
LED/÷/߱ |
Shao Guanning1), ȫ1)* |
1)б |
All-solution processed green quantum-dot lighting device with
PEDOT:PSS:PMA p-type conducting layer |
| A-8 |
LED/÷/߱ |
Weiwei Xiang, Yongbin Hua, * |
б |
WLED ߱ Ca4Nb2O9:Eu3+ ü ռ Ư |
| A-9 |
LED/÷/߱ |
̻1),
1), ΰ1),2)* |
1)2)ѱдб |
ȯ ȿ 1 ڰ |
| A-10 |
LED/÷/߱ |
1,2), ȣ3), ؼ2), ö2), 2)* |
1)б2)ѱб3)б |
Highly Efficient Top-Emitting Infrared-to-Visible
Up-Conversion Device Using Micro-Cavity Effect |
| A-11 |
LED/÷/߱ |
1),
ż1), 1), 1), ּ1), Ͽ1), ̵1)* |
1)ְб |
InGaN based Blue Micro LED Double-Layer passivation ȿ |
| A-12 |
LED/÷/߱ |
翵1),
ּ1), 1), 1), 1), ̵1)* |
1)ְб |
SiO2,
SiNx, W
ü ũ ̿ LED м |
| A-13 |
LED/÷/߱ |
ۿȣ1),
⿵1), 1)* |
1)KAIST |
GaN/InGaN ڿ칰 ° ε ġ |
| A-14 |
LED/÷/߱ |
ȿ1),2), ǿ2),, ȣ2) 4) μ1) 5) 5) 6) ̵â3) 2),3) 1)* |
1)Ѿб2)հб 3)б4)ѱб5)ѱڱ6)б |
ALD-Based Multinary Metal Oxide Electron Transport Layer for
Quantum Dot Light-Emitting Diode |
| A-15 |
LED/÷/߱ |
̽¹1),
̼1), Ȳ2), 缺3), ڻ* |
1)2)âб3)ѱ |
Self-assmbled monolayer-V2O5 ̿ ڰ ȭ |
| A-16 |
LED/÷/߱ |
ҿ1),
1), 1), ȫ1)* |
1)б |
εԷ InGaN/GaN ߾ڿ칰 ߱ |
| A-17 |
LED/÷/߱ |
¿1),
輺1)* |
1)װб |
Reversible and Electrotunable Assembly/Disassembly of
Plasmonic Nanoparticles |
| A-18 |
LED/÷/߱ |
, , , ŵ* |
Ѿб |
LED ξȿ ± ǥ鴩 ġ |
| A-19 |
LED/÷/߱ |
, ŵ, * |
Ѿб |
InGaN/GaN û Micro-LED 뷮- Ư м |
| A-20 |
LED/÷/߱ |
ϱ, λ, ŵ, * |
Ѿб |
Ǵ м Eu:GaN LED м |
| A-21 |
LED/÷/߱ |
, λ, ŵ, * |
Ѿб |
ҿ ũ LED ȿ ȭ м |
| A-22 |
LED/÷/߱ |
1),
ȣ1), 輺1)* |
1)װб |
The Isomer Chemistry of Magic Sized Clusters |
| A-23 |
LED/÷/߱ |
ڿ1),
Ŵ1), 1)* |
1)2)հб |
ܼ ڿ ݷ̵ Ȱ |
| A-24 |
LED/÷/߱ |
ְ1), Hachi V. Tran1), 1) 1)* |
1)հб |
ܼ Ȳȭ ũŻ м |
| A-25 |
LED/÷/߱ |
1),
ֿȣ2), ȿ1), ȣ2), 2)3), 1)* |
1)Ѿб2)հб |
ZnMgO Nanoparticles via Ultrasonic-Assisted Synthesis for
InP-based QD-LEDs |
| A-26 |
LED/÷/߱ |
1),
1), 2), 翵1), 1), ̽1), ȣ2), ̵1)* |
1)ְб 2)ѱб |
2 GaN homoepitaxy ڸ |
| A-27 |
LED/÷/߱ |
1),
뿵1),
ٰٽ1), 輺1), ̹μ1), ѽ1), ż, ȫ, ö1), ȣ1)* |
1)ϴб |
Non-polar core-shell AlGaN nanorod LED devices operating in
ultraviolet wavelength region |
| A-28 |
LED/÷/߱ |
1),2), ȫ1)* |
1)б 2)б |
Fabrication of GaN Nanorods Using Metal-Assisted photoChemical
Etching |
| A-29 |
LED/÷/߱ |
ڿ1), â1), ȣ2), 輱2), ȯ1,2)* |
1)2)б |
Low-Temperature growth of GaN with Adatom Migration
Enhancement |
| B-1 |
// |
±1),
1), 2), Ӽ2), 汹1,2)* |
1)2)ѱдб |
Ʃ Pt NO2 |
| B-2 |
// |
ؿ1),
1), 2), Ӽ2), 汹1,2)* |
1)2)ѱдб |
UV ȭ 뱸 ± H2 |
| B-3 |
// |
1,
ɱԹ2, 뼺2, 輺1* |
12װб |
Controlling the Surface of Ag2S Nanocrystals for High-Performance Photomultiplication-Type
Photodiode |
| B-4 |
// |
ȿ1,2), Pratik Mane2), Vishal Burungale2), 1), ؼ2)* |
1)ѱ 2)б |
graphitic carbon nitride(g-C3N4) ̿ һ Cu2O ȿ |
| B-5 |
// |
̴ٿ1),1)* |
1)ϴб |
Lithiatable thin SnOX film deposited by ALD for Li metal battery |
| B-6 |
// |
ȣ1),
ȣ1), 2), 1), ȫ1), 1), 2), 谡3)* |
1)2)ѱ 3)ϴб |
Study on the Link Between Amorphous Silicon-Based Surface
Passivation and Varied Si-H Configurations in Silicon Solar Cells |
| C-1 |
/ý/ |
¸1),
ȣ1), 輺2), 1)* |
1)ѱдб 2)Orbray Co. |
High performance Diamond Schottky barrier diode grown on
heteroepitaxial diamond substrate using microwave plasma chemical vapor
deposition |
| C-2 |
/ý/ |
ö, , ֿ, , þϸ, * |
ѱдб |
Vertical PiN Diode intrinsic AlGaN Drift layer |
| C-3 |
ڡýۡ |
Gyeong Ryul Lee, Cheolho Yang, and Roy Byung Kyu Chung* |
1) Kyungpook National
University |
ȭݵü LED |
| C-4 |
ڡýۡ |
Yoonho Choi,1 Chan Woong Kim,1 Ha Young Kang,1 and Roy Byung Kyu Chung,1,* |
1) Kyungpook National
University |
Investigation of structural and electrical properties of
F-doped -Ga2O3 |
| C-5 |
ڡýۡ |
1),
1)* |
1)ϴб |
Interface Engineering of Gallium Oxide Polymorphs |
| C-6 |
/ý/ |
輱â1),
ڼ1), 1)* |
1)ϴб |
Developing of Tin Oxide TFTs for Monolithic 3D Integration |
| C-7 |
/ý/ |
1,),
迵1,), 2), 缺3), 汹1,2)* |
1)2)3)ѱдб |
ȭ ڸ Ʈ Metal Capping layer Ư |
| C-8 |
/ý/ |
1,2), ȯ3), 1), 1), ±3), ÿ1)* |
1)ѱͱ2)3)λб |
̾ ̼ ȭ ռ ̾Ƹ ڸ |
| C-9 |
/ý/ |
1,
1), ÿ1), 1)* |
1)ѱͱ |
EFG ȭ ܰ 忡 Ȱ 뿡 ߹ؼ |
| C-10 |
/ý/ |
Nhat-Minh Phung1,2), Si-Young Bae1), Soonil Lee2), and Seong-Min Jeong1),* |
1)KICET2)Changwon National University |
Experimental kinetic approximation of HfO2 Atomic Layer Deposition using CpHf(N(CH3)2)3 as Hf source |
| C-11 |
/ý/ |
1)*,
赿1), 1), Ź1), 1), 1), 赿1), 輺1) |
1)ѱſ |
GaN-on-GaN PiN Diode ¹ݵü |
| C-12 |
/ý/ |
μ1,2,
ȣ1, ȣ1, ڹμ2*, ÿ1,*, |
1)ѱͱ 2)ƴб |
̽Ʈ ȭб ȭ ڸ Ư Ƭ ġ ȿ |
| C-13 |
/ý/ |
ֹ1,2), ȫ3), 1), ÿ1), 1)* |
1)ѱͱ 2)λб3)泲б |
EFG Ÿ ȭ ܰ м |
| C-14 |
/ý/ |
Ź, , 赿, , , 赿, 輺, * |
ѱſ |
ȭ current aperture vertical electron
transistor |
| C-15 |
/ý/ |
赿1),2), ȫ1), 輺2),2)* |
1)ϴб 2)ѱſ |
GaN ¹ݵü p GaN |
| C-16 |
/ý/ |
Soo-Young Moon1),2), Hyun-Woo Lee1),2), Sang-Mo Koo1), Sung-Beum Bae2) and Hyung-seok Lee2) |
1)Kwangwoon University 2)ETRI |
Design and Simulation of Enhanced Power Devices: Integrating
GaN FinFETs with NiO for Improved Performance |
| C-17 |
/ý/ |
Ͽ1),
1)* |
1)ϴб |
Single-Phase Growth and Single-Domain Formation of
Orthorhombic Ga2O3: Influence of Dopants
and Theoretical Insights |
| D-1 |
//Ű |
躴1),
2),1)* |
1)KAIST2)KIST |
е InAlAs/Al40Ga60As ü ڱ- Ư |
| D-2 |
//Ű |
1),
ۿȣ1), 1)* |
1)ѱб |
̾ ȭ GaN ܱ Ư ȭ |
| D-3 |
//Ű |
ȫ1,*,
1, Disha
Talreja2,
Padma Gopalan3,
Luke Mawst2 |
1)ѱ 2)3)Univ. of Wisconsin |
Structural and Optical Characteristics of Selectively Grown InxGa1-xAs quantum dots using
diblock copolymer lithography |
| D-4 |
//Ű |
豸ȯ1),2)*, Tetiana V. Slusar1), ȫ1), ȣ1), 1), 1), 1), 1), 1), μ1), ̸2), 1) |
1)ѱſ2)հб |
Generating entangled photon pairs in thin-film lithium niobate
for quantum communication |
| D-5 |
//Ű |
õ1), 1)* |
1)ִб |
|
| D-6 |
//Ű |
Roni Rahmat, Yong-Hoon Cho* |
KAIST |
Self-rolled-up SiO/SiO2 Microtube from Prestrained Nanomembrane by Wet-etching Method |
| D-7 |
//Ű |
ٿ1),
2), 1), 1), ź2), 1)* |
1)2)ѱб |
ܱ зκ꽺īƮ ũŻ ö Ÿ ijƼ |
| D-8 |
//Ű |
1),
ִ뱤2), 3), 1)* |
1)ѱб2)б3)ѱб |
GaAs 1 İ ü ӹڻ ȣۿ |
| D-9 |
//Ű |
豤1),
2), 1)* |
1)ѱб2)ѱб |
ȭ ũ Ư :긮 ӻ ȸ |
| D-10 |
//Ű |
̿1),2)*, Ȳ1), 1),2), Ӽҿ1),2), 1),2) |
1)ѱſ 2)бմпб |
Tl2Ba2CaCu2O8/Bi2Se3 ȭ Ư |
| D-11 |
//Ű |
1),
1), 1), 躴1), ٿ1), 2), ź2), 1)* |
1)2)ѱб |
յ κ꽺īƮ ̿ ġ ܱ |
| D-12 |
//Ű |
ڼ1),
1)* |
1)ѱб |
ݼ |
| D-13 |
//Ű |
1),2)*, Ȳ1), Ӽҿ1),2), 1),2), ̿1),2) |
1)ѱſ 2)бմпб |
Bi ũĿ ȭ Bi2Se3 ڸ |
| D-14 |
//Ű |
1)*, ȫ2) |
1)ѱſ2)б |
ⱸ Ȯ ϱ ߱ |
| D-15 |
//Ű |
ȣ1),
1), ŵ1), 1)* |
1)б |
Propagation length enhacement of guided exciton–polaritons in
hBN integrated WS2
multilayers |
| E-1 |
//м |
Ȳ1),
ȼ1), 1), ⿵1), 1)* |
1)ѱб |
ȭ İ ̿ AlGaN/GaN ü ũ Ʃ ۰ Ư м |
| E-2 |
//м |
ְ1),
缱1), 1), 1), 1), 1), ӽ¿2), 1)* 2) |
1)ִб2)ť |
SERS ʸ ̿ GaN ǥ ö м |
| E-3 |
//м |
1),
1), 缱1), ְ1), 1), 1), ӽ¿2), 1,2)* |
1)ִб2)ť |
Analysis of surface damage in GaN epi layers using SERS |
| E-4 |
//м |
Gaeun Cho1),2),Dongeon Kim1), Se-Woong Baek1)*and Han Seul Kim3),4)* |
1)Korea University2)KISTI3)4)Chungbuk National University |
Synergistic Passivation Strategy with a First Principles
calculation ; Enhancing Optoelectronic Device Performance of AgBiS2 Colloidal
Quantum Dots |
| E-5 |
//м |
, ŵ, * |
1)Ѿб |
GaN û ũ LED ũ Ư м |
| E-6 |
//м |
Dongho Lee1) Han Seul Kim1)* |
1)Chungbuk National University |
Theoretical design of a multi–modal gas sensor for selective
detection of NH3 and
NOx using
a Bismuth-based lead-free metal-halide perovskite |
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